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NTHD2102P
Power MOSFET
?8.0 V, ?4.6 A Dual P?Channel ChipFET t
Features
? Offers an Ultra Low R DS(on) Solution in the ChipFET Package
? Miniature ChipFET Package 40% Smaller Footprint than TSOP?6
making it an Ideal Device for Applications where Board Space is at a
http://onsemi.com
?
?
?
Premium
Low Profile (<1.1 mm) Allows it to Fit Easily into Extremely Thin
Environments such as Portable Electronics
Designed to Provide Low R DS(on) at Gate Voltage as Low as 1.8 V, the
Operating Voltage used in many Logic ICs in Portable Electronics
Simplifies Circuit Design since Additional Boost Circuits for Gate
V (BR)DSS
?8.0 V
R DS(on) TYP
50 m W @ ?4.5 V
68 m W @ ?2.5 V
100 m W @ ?1.8 V
I D MAX
?4.6 A
?
?
Voltages are not Required
Operated at Standard Logic Level Gate Drive, Facilitating Future
Migration to Lower Levels using the same Basic Topology
Pb?Free Package is Available
G 1
S 1
G 2
S 2
Applications
? Optimized for Battery and Load Management Applications in
Portable Equipment such as MP3 Players, Cell Phones, Digital
Cameras, Personal Digital Assistant and other Portable Applications
? Charge Control in Battery Chargers
? Buck and Boost Converters
MAXIMUM RATINGS (T J = 25 ° C unless otherwise noted)
D 1
P?Channel MOSFET
D 2
P?Channel MOSFET
ChipFET
CASE 1206A
STYLE 2
Rating
Symbol
Value
Unit
Drain?to?Source Voltage
Gate?to?Source Voltage ? Continuous
Drain Current ? Continuous
V DSS
V GS
I D
?8.0
" 8.0
?3.4
V
V
A
PIN
CONNECTIONS
MARKING
DIAGRAM
? 5 seconds
I D
?4.6
D 1 8
1 S 1
1
8
Total Power Dissipation
Continuous @ T A = 25 ° C
(5 sec) @ T A = 25 ° C
Continuous @ 85 ° C
(5 sec) @ 85 ° C
P D
1.1
2.1
0.6
1.1
W
D 1 7
D 2 6
D 2 5
2 G 1
3 S 2
4 G 2
2
3
4
7
6
5
Operating Junction and Storage Temperature
Range
T J , T stg
?55 to
+150
° C
D5 = Specific Device Code
Continuous Source Current
(Diode Conduction)
Thermal Resistance (Note 1)
Junction?to?Ambient, 5 sec
Junction?to?Ambient, Continuous
Is
R q JA
R q JA
?1.1
60
113
A
° C/W
M = Month Code
G
= Pb?Free Package
ORDERING INFORMATION
Device Package Shipping ?
Maximum Lead Temperature for Soldering
Purposes, 1/8 ″ from case for 10 seconds
T L
260
° C
NTHD2102PT1
ChipFET
3000/Tape & Reel
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
NTHD2102PT1G
ChipFET
(Pb?Free)
3000/Tape & Reel
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.27 in sq
[1 oz] including traces).
?For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
? Semiconductor Components Industries, LLC, 2005
November, 2005 ? Rev. 5
1
Publication Order Number:
NTHD2102P/D
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